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PD - 95785
IRG4BC30K-SPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
High short circuit rating optimized for motor control, tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter distribution and higher efficiency than previous generations Lead-Free
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
G E
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 16A
n-channel
Benefits
As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT Latest generation 4 IGBTs offer highest power density motor controls possible This part replaces the IRGBC30K-S and IRGBC30M-S devices
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM tsc VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
D 2 Pak
Max.
600 28 16 58 58 10 20 260 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm)
Units
V A
s V mJ W
C
Thermal Resistance
Parameter
RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient ( PCB Mounted,steady-state) Weight
Typ.
0.5 1.44
Max.
1.2 40
Units
C/W g
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1
8/27/04
IRG4BC30K-SPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 Emitter-to-Collector Breakdown Voltage 18 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.54 2.21 2.21 VCE(ON) Collector-to-Emitter Saturation Voltage 2.88 2.36 VGE(th) Gate Threshold Voltage 3.0 V GE(th)/TJ Temperature Coeff. of Threshold Voltage -12 gfe Forward Transconductance 5.4 8.1 ICES Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS Max. Units Conditions V VGE = 0V, IC = 250A V VGE = 0V, IC = 1.0A V/C VGE = 0V, IC = 1.0mA IC = 14A VGE = 15V 2.7 IC = 16A V IC = 28A See Fig.2, 5 IC = 16A , TJ = 150C 6.0 VCE = VGE, IC = 250A mV/C VCE = VGE, IC = 250A S VCE = 100V, IC = 16A 250 VGE = 0V, VCE = 600V 2.0 A VGE = 0V, VCE = 10V, TJ = 25C 1100 VGE = 0V, VCE = 600V, TJ = 150C 100 n A VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets Eon Eoff Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 10 Typ. 67 11 25 26 28 130 120 0.36 0.51 0.87 25 29 190 190 1.2 0.26 0.36 0.62 7.5 920 110 27 Max. Units Conditions 100 IC = 16A 16 nC VCC = 400V See Fig.8 37 VGE = 15V TJ = 25C ns 200 IC = 16A, VCC = 480V 170 VGE = 15V, RG = 23 Energy losses include "tail" mJ See Fig. 9,10,14 1.3 s VCC = 400V, TJ = 125C VGE = 15V, RG = 23 , VCPK < 500V TJ = 150C, IC = 16A, VCC = 480V ns VGE = 15V, RG = 23 Energy losses include "tail" mJ See Fig. 11,14 TJ = 25C, VGE = 15V, RG = 23 mJ IC = 14A, VCC = 480V Energy losses include "tail" nH Measured 5mm from package VGE = 0V pF VCC = 30V See Fig. 7 = 1.0MHz
Details of note through are on the last page
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IRG4BC30K-SPbF
6.0 For both:
Triangular wave:
5.0
Load Current ( A )
Duty cycle: 50% TJ = 125C 55C Tsink = 90C Gate drive as specified
Power Dissipation = 1.8W Clamp voltage: 80% of rated
4.0 Square wave: 3.0 60% of rated voltage
2.0
1.0
Ideal diodes
0.0 0.1 1 10
A
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
I C , Collector-to-Emitter Current (A)
TJ = 150 o C
10
I C, Collector-to-Emitter Current (A)
TJ = 25 o C
TJ = 150 oC
10
TJ = 25 oC
1
1
0.1 1
V GE = 15V 20s PULSE WIDTH
10
0.1 5 10
V CC = 50V 5s PULSE WIDTH
15
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRG4BC30K-SPbF
30
4.0
25
20
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
VGE = 15V 80 us PULSE WIDTH
IC = 32 A
3.0
15
IC = 16 A
2.0
10
IC = 8.0A 8A
5
0 25 50 75 100 125 150
1.0 -60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature ( C)
T Junction Temperature ( ( C) TJJ, , Junction TemperatureC)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4BC30K-SPbF
1500
1200
VGE , Gate-to-Emitter Voltage (V)
100
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 16A
16
C, Capacitance (pF)
900
Cies
12
600
8
300
Coes Cres
4
0 1 10
0 0 20 40 60 80
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
1.5
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC = 480V V GE = 15V TJ = 25 C I C = 16A
10
RG = Ohm 23 VGE = 15V VCC = 480V
IC = 32 A
IC = 16 A
1
1.0
IC = 8.0A 8A
0.5 0 10 20 30 40 50
0.1 -60 -40 -20
0
20
40
60
80 100 120 140 160
RG , Gate Resistance (Ohm)
TJ , Junction Temperature ( C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRG4BC30K-SPbF
4.0
2.4
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
RG TJ VCC 3.2 VGE
= 23 Ohm = 150 C = 480V = 15V
100
VGE = 20V T J = 125 oC
10
1.6
0.8
SAFE OPERATING AREA
0.0 0 8 16 24 32 40
1 1 10 100 1000
I C , Collector-to-emitter Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
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IRG4BC30K-SPbF
L 50V 1000V VC *
0 - 480V
D.U.T.
RL =
480V 4 X I C@25C
c
480F 960V
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
IC L Driver* 50V D.U.T. VC
Fig. 14a - Switching Loss
Test Circuit
* Driver same type as D.U.T., VC = 480V
A
1000V
d
e
c d
90%
e
VC 90%
10%
t d(off)
Fig. 14b - Switching Loss
Waveforms
10% I C 5% t d(on)
tr E on E ts = (Eon +Eoff )
tf t=5s E off
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IRG4BC30K-SPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IR F530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY L INE "L" Note: "P" in ass embly line pos ition indicates "Lead-Free" INT ER NAT IONAL RECT IFIE R LOGO AS S E MBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WE EK 02 LINE L
OR
INT E RNAT IONAL RE CT IF IE R LOGO AS SE MB LY LOT CODE PART NUMBE R F 530S DAT E CODE P = DE S IGNAT E S LE AD-F RE E PRODUCT (OPT IONAL) YE AR 0 = 2000 WE E K 02 A = AS S EMBLY S IT E CODE
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IRG4BC30K-SPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 23,
(See fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/04
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